Lanthanide-doped LaSi<sub>3</sub>N<sub>5</sub> based phosphors: Ab initio study of electronic structures, band gaps, and energy level locations
- Author(s)
- Ismail A.M. Ibrahim, Zoltán Lenčéš, Lubomir Benco, Pavol Šajgalík
- Organisation(s)
- Computational Materials Physics
- External organisation(s)
- Slovak Academy of Sciences (SAS), Helwan University Cairo
- Journal
- Journal of Luminescence
- Volume
- 172
- Pages
- 83-91
- No. of pages
- 9
- ISSN
- 0022-2313
- DOI
- https://doi.org/10.1016/j.jlumin.2015.11.033
- Publication date
- 04-2016
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103025 Quantum mechanics, 103036 Theoretical physics, 103015 Condensed matter, 103009 Solid state physics
- Keywords
- ASJC Scopus subject areas
- Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Chemistry(all), Biophysics, Biochemistry
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/lanthanidedoped-lasi3n5-based-phosphors-ab-initio-study-of-electronic-structures-band-gaps-and-energy-level-locations(81d50481-99bc-4a33-806c-e9178baf8503).html